description: the central semiconductor CMLD4448 type contains two (2) isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in a picomini ? surface mount package. these devices are designed for high speed switching applications. marking code: c48 maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 120 v continuous forward current i f 250 ma peak repetitive forward current i frm 500 ma forward surge current, tp=1 ms i fsm 4.0 a forward surge current, tp=1 s i fsm 1.0 a power dissipation p d 300 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 417 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units bv r i r =100a 120 150 v i r v r =50v 300 na i r v r =50v, t a =125c 100 a i r v r =100v 500 na v f i f =1.0ma 0.55 0.59 0.65 v v f i f =10ma 0.67 0.72 0.77 v v f i f =100ma 0.85 0.91 1.0 v c t v r =0, f=1 mhz 1.5 pf t rr i r =i f =10ma, r l =100 ? , rec. to 1.0ma 2.0 4.0 ns CMLD4448 surface mount picomini ? dual, isolated high speed silicon switching diodes central semiconductor corp. tm r1 (2-december 2003) sot-563 case
central semiconductor corp. tm CMLD4448 surface mount picomini ? dual, isolated high speed silicon switching diodes r1 (2-december 2003) lead code: 1) anode d1 2) nc 3) anode d2 4) cathode d2 5) nc 6) cathode d1 marking code: c48 sot-563 case - mechanical outline a b c h g f d e e r0 12 3 65 4 pin configuration
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